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DATA SHEET
BGB110 Bluetooth radio module
Objective specification 2000 Oct 03
Philips Semiconductors
Objective specification
Bluetooth radio module
FEATURES * Plug-and-play Bluetooth class II radio module, needs only external antenna and reference clock * Small dimensions (13.75 x 10.2 x 1.9 mm) * Fully compliant to Bluetooth radio specification v1.0 * High sensitivity (typical -80 dBm) * Advanced AFC for improved reception quality * RSSI with high dynamic range * BlueRF unidirectional JTAG RXMODE 2 compatible * Simple interfacing to Philips VW2600X baseband controller family * Internal shielding for better EMI (Electro Magnetic Interference) immunity. * 13 MHz system clock output for baseband processor * 2.048 MHz clock output for PCM voice codecs. APPLICATIONS Bluetooth transceivers in: * Cellular phones * Laptop computers * Personal digital assitants * Consumer applications.
BGB110
DESCRIPTION The BGB110 TrueBlue Bluetooth radio module is a short-range radio transceiver for wireless links operating in the globally available ISM band, between 2402 and 2480 MHz. It is composed of a fully integrated, state-of-the-art near-zero-IF transceiver chip, an antenna filter for improved out-of-band blocking performance, a TX/RX switch, TX and RX baluns, the VCO resonator and a basic amount of supply decoupling. The device is a "Plug-and Play" module that needs no external components for proper operation. Robust design allows for untrimmed components, giving a cost-optimized solution. Demodulation is done in open-loop mode to reduce the effects of reference frequency breakthrough on reception quality. An advanced AFC circuit compensates for VCO drift and RF frequency errors during open-loop demodulation. The circuit is integrated on a ceramic substrate. It is connected to the main PCB through a LGA (Land Grid Array). A metal cap suppresses the effects of EMI (Electro Magnetic Interference). The RF port has a normalized 50 impedance and can be connected directly to an external antenna, with a 50 transmission line. The control interface is compatible whith BlueRF unidirectional JTAG RXMODE 2. The connection to Philips Semiconductors VW2600X family of Bluetooth baseband processors is straightforward. Frequency selection is done internally by a conventional synthesizer. The synthesizer accepts a reference frequency of 13 MHz. This reference frequency should either be stabilised by an external crystal or be supplied by en external source. The 13 MHz clock signal is also made available as a system clock to the baseband processor. It can be switched off for power saving. In that case, a 3.2 kHz clock is provided for wake-up timing. A 1 MHz reference, derived from the 13 MHz system clock, is available externally to clock out the transmit data from the baseband processor. The BGB110 also provides a 2.048 MHz clock for PCM voice codecs The circuit is designed to operate from 3.0 V nominal supplies. Separate ground and supply connections are provided for reduced parasitic coupling between different stages of the circuit. There is a basic amount of RF supply decoupling incorporated into the circuit. The envelope is a leadless SOTtbdA package with a metal cap.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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Philips Semiconductors
Objective specification
Bluetooth radio module
PINNING PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17, 20, 25, 26, 27, 28, 29, 30, 31, 33, 34 18 19 21 22 23 24 32 DESCRIPTION VCO supply voltage VCO tuning voltage (for test only) analog part 2 supply voltage transmit data stream input synthesiser turn-on input signal serial interface (JTAG) clock input serial interface (JTAG) control mode select input serial interface (JTAG) control data input serial interface (JTAG) control data output power-on reset output digital part supply voltage low-power clock output packet switching on input signal 2.048 MHz clock output for PCM codecs system clock request input system clock output ground
bottom view
BGB110
Fig.1 Simplified outline
transmit data clock output receive data stream output crystal oscillator output crystal oscillator or external clock input power-on reset input analog part 1 supply voltage antenna input/output
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Philips Semiconductors
Objective specification
Bluetooth radio module
QUICK REFERENCE DATA VS = 3.0 V; Tamb = 25 C; unless otherwise specified. SYMBOL VS IS (RX guard) IS (TX guard) IS (TX) IS (pd) Sens Pout f0 fref Tamb PARAMETER supply voltage supply current supply current supply current supply current receiver sensitivity output power RF frequency reference input frequency operating ambient temperature during RX guard space during demodulation during TX guard space during transmission in power-down mode BER = 0.1 % under standard conditions CONDITIONS - - - - - - - 2402 - -10 MIN. 2.8 3 30 65 43 37 1 -80 0 - 13 - TYP.
BGB110
MAX. 3.6 - - - - - -73 - 2480 - 50
UNIT V mA mA mA mA mA dBm dBm MHz MHz C
IS (RX demod) supply current
BLOCK DIAGRAM
R_DATA
TX_DATA
VS_VCO
VTUNE
SYNT_ON PX_ON SI_CLK SI_CMS SI_CDI SI_CDO POR_EXT POR SYS_CLK_REQ SYS_CLK LPO_CLK PCM_CLK TX_CLK XOP XON
Supply decoupling
VCO tank
PLL loop filter
Interface adapter IC
RF IC
TX balun + filter
Supply decoupling
RX balun + filter
TX/RX switch
Filter
ANT
VS_ANA1
VS_DIG GND
VS_ANA2
Fig.2 Block diagram.
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Philips Semiconductors
Objective specification
Bluetooth radio module
FUNCTIONAL DESCRIPTION Control
BGB110
The BGB110 TrueBlue Bluetooth Radio Module is compatible with BlueRF unidirectional JTAG RXMODE 2. It can be controlled directly by a Philips VW2600X family baseband processor, via an 8-wire control interface. These 8 wires can be grouped into: * A four-wire serial JTAG interface for initialisation and general control of the radio module. The control signals are SI_CDI (control data input), SI_CMS (control mode select), SI_CLK (control clock) and SI_CDO (control data output). * Three asynchronous control input signals SYS_CLK_REQ, PX_ON and SYNT_ON. * One asynchronous reset input signal POR_EXT. These latter four wires control specific blocks inside the radio module. Furthermore, the BGB110 supplies the baseband processor with four clock signals: * A 13 MHz system clock SYS_CLK, which can be switched off in order to save power. * A 1 MHz transmit clock TX_CLK, for clocking out the data to be transmitted. * A 3.2 kHz low-power clock for wake-up timing in the baseband processor. * A 2.048 MHz clock for PCM voice codecs. JTAG interface The JTAG serial interface is used to control the BGB110. The BGB110 has to be the only slave on the JTAG bus, it does not allow for multi-slave operation. The JTAG interface protocol used is fully compliant with the standard set out in IEEE Std 1149.1-1990. The following features are supported: * 5-bit register address. * 8-bit data. * Set instruction register. * Read/write data register (note that some addresses denote separate read and write data registers). The JTAG interface allows for 2 ways of accessing a register. One is the communicate address and data, and the second one is for successive accesses to the same register where only the data is communicated. This can e.g. be used for updating the channel information before every packet. STATE DIAGRAM The state diagram is shown in Fig.3. Transitions from one state to another depend on the SI_CMS input at the rising edge of SI_CLK. The SI_CMS and SI_CDI should change value at the falling edge of SI_CLK. Output SI_CDO will also change at the falling edge of SI_CLK. An instruction register scan (IR-Scan) period starts with a status information download (Capture-IR). The status inputs to the instruction register are user-defined observability inputs. Afterwards, the data can be shifted out (Shift-IR), at the same time as serial data/instruction are shifted in, or directly updated to the parallel output (Exit1-IR, Update-IR). There is also a possibility for the IR-Scan period to be paused (Pause-IR) before a new data-shift. A data register scan period is identical but there are no restrictions on the data during Capture-DR.
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Philips Semiconductors
Objective specification
Bluetooth radio module
BGB110
1
Control-LogicReset 0
0
Run Control / Idle
1
Select-DRScan 0 1 Capture-DR 0 Shift-DR 1 Exit1-DR 0 Pause-DR 1 0 Exit2-DR 1 1 Update-DR 0 1
1
Select-IR-Scan
1
0 1 Capture-IR 0 0 Shift-IR 1 Exit1-IR 0 0 Pause-IR 1 0 Exit2-IR 1 Update-IR 1 0 0 1 0
Fig.3 State diagram for register programming using the JTAG serial interface
REGISTER SCAN There are two types of register scans used for controlling the functionality: * IR (instruction register) scan is the normal read/write instruction. This instruction selects a specific register to write to or read from. * DR (data register) scan where 8 bits of data are shifted into the register. By choosing the register with an IR scan and performing a DR scan the data can be captured into the instruction registers. TIMING The serial interface is operational when there is a 13 MHz SYS_CLK and POR_EXT is `high'. All input signals (SI_CDI, SI_CMS) into the serial interface should change on the negative edge of the serial clock (SI_CLK). The serial interface samples the SI_CDI and SI_CMS signals on the positive edge of SI_CLK to eliminate setup and hold violations. The output signal (SI_CDO) should also change on the negative edge of SI_CLK. The input data always be in whole bytes.
SI_CLK
MIN.
SI_CMS
TYP. 250 76 - -
MAX. - - - 20
UNIT ns ns ns ns
tSI_CLK
SI_CDI
200 76 20 -
tSI_CLK2 t1 t2
t2 t1 tSI_CLK2
SI_CDO
tSI_CLK
Fig.4 Timing diagram for the JTAG serial interface 2000 Oct 03 6
Philips Semiconductors
Objective specification
Bluetooth radio module
Registers
BGB110
The following registers are important for setting up a Bluetooth link with the BGB110. They are controlled over the serial interface. REGISTER S_EN_WIDTH CHANNEL RSSI XO_Trim ID CONTROL ENABLE GFSK_TABLE S_EN_WIDTH The S_EN_WIDTH register is used to control the amount of time that the RF frequency synthesizer has to switch from one frequency to the next, and to settle down. It defaults to 200 s. S_EN_WIDTH 9 Bits b7 -b0 S_EN_WIDTH S_EN_WIDTH (in s) b7 b6 b5 b4 b3 b2 b1 b0 R/W W R W R R/W R/W R/W ADDRESS 9 18 18 19 19 22 25 28 RESET 0xC8 0x00 0x00 0x80 0xA1 0x00 0x00 0x00 S_EN width frequency channel number and TX/RX information RSSI trim value for system clock device identification system clock control module control GFSK filter lookup table values DESCRIPTION
S_EN_WIDTH
CHANNEL PROGRAMMING The serial interface channel programming word is converted to a synthesizer division ratio. CHANNEL 18 Bit b7 Bits b6 - b0 trx channel number b7 trx 0 = TX, 1 = RX channel 0 is at 2402 MHz, channel 78 is at 2480 MHz. There is no need to program different values for RX and TX on the same channel b6 b5 b4 b3 channel number b2 b1 b0
RSSI The RSSI is read via the serial interface. The RSSI value can only be read from the serial interface register after the measurement has been completed, which is at the end of the packet. RSSI measurements are only done in receive packets. RSSI 18 b7 b6 b5 b4 RSSI b3 b2 b1 b0
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Philips Semiconductors
Objective specification
Bluetooth radio module
XO_TRIM
BGB110
The XO_Trim register is used to control the frequency of the 13 MHz oscillator, by controlling the capacitive load on the XIN and XOUT pins. XO_TRIM 19 Bit b7 Bit b6 Bit b5 Bit b4 Bit b3 Bit b2 Bit b1 Bit b0 ID The ID register is used to identify the BGB110 set from the baseband. This is read only. ID 19 Bits b7 -b0 CONTROL The CONTROL register is used to control SYS_CLK in the BGB110. CONTROL 22 Bits b7 - b3 Bit b2 Bits b1 - b30 ENABLE The ENABLE register is used to control functions inside the BGB110 ENABLE 25 Bit b7 Bit b6 Bit b5 Bit b4 Bits b3 - b0 b7 not used not used grst not used clk_en not used b6 grst b5 not used b4 clk_en b3 b2 not used b1 b0 not used Rdy not used b7 b6 not used not to be used baseband ready, used to control the function of SYS_CLK_REQ not to be used b5 b4 b3 Rdy b2 b1 not used b0 ID b7 b6 b5 b4 ID radio chip set identification (value = 0xA1) b3 b2 b1 b0 b7 not used not to be used add 6 pF to XIN and XOUT add 3 pF to XIN and XOUT add 1.5 pF to XIN and XOUT add 0.75 pF to XIN and XOUT add 0.375 pF to XIN and XOUT add 0.1875 pF to XIN and XOUT add 0.09375 pF to XIN and XOUT b6 b5 b4 b3 XO-trim b2 b1 b0
not to be used GFSK table address reset. Writing `1' will reset the GFSK table addressing. This bit needs to be reset to `0' before writing to the GFSK table not to be used enables the 2.048 MHz clock on PCM_CLK, `0' = clock diable, `1' = clock enable not to be used
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Philips Semiconductors
Objective specification
Bluetooth radio module
GFSK_TABLE
BGB110
The GFSK_TABLE register defines the Gaussian filtering of the datastream to be transmitted. It consists of 13 registers, the contents of which define the shape of the Gaussian-filtered modulating signal. There is an auto-increment facility, so that subsequent writes to this register result in subsequent shape values being written. Setting the `grst' bit in the ENABLE register to `1' resets the auto-increment counter. It should be reset to `0' before loading the shape values. The values into this table depend on the supply voltage. Below is given an example table that can be used for a 3.0 V supply voltage. If there is a different supply voltage, these values should be scaled accordingly. GFSK_TABLE 28 Bits b7 -b0 Shape value # 0 1 2 3 4 5 6 7 8 9 10 11 12 Reset The BGB110 has an internal power-on reset function, which is operational every time the supply voltage is switched on. This will reset all internal registers and will bring the device into a known state. Next to the built-in power-on reset, there is the POR_EXT reset signal. This will also reset the device and put it into the same state as the power-on reset. The POR_EXT signal is intended to be used as a reset from a host processor. Following the power-on reset or a POR_EXT reset, the system oscillator is started and the SYS_CLK output is activated (enabled). The SYS_CLK can be controlled by the SYS_CLK_REQ signal. It will only control the SYS_CLK once the Rdy bit in the CONTROL register has been set. The function of the SYS_CLK _REQ has two phases: 1. After reset, the SYS_CLK_REQ is not taken into account for generation of SYS_CLK. The 13 MHz system clock is enabled on SYS_CLK. 2. Once register CONTROL Rdy is set to `1', the 13 MHz system clock on the SYS_CLK is controlled by SYS_CLK_REQ. SYS_CLK_REQ does not control the oscillator itself. The oscillator will not be disabled by the SYS_CLK_REQ signal. LPO_CLK output is only controlled by the POR_EXT which also controls the POR output. POR is activated 4 SYS_CLK cycles after POR_EXT. GFSK_TABLE Value 0x3B 0x3C 0x3E 0x42 0x4A 0x57 0x66 0x75 0x82 0x8A 0x8E 0x90 0x91 b7 b6 b5 b4 b3 b2 b1 b0
GFSK_TABLE Gaussian filter shape value
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Philips Semiconductors
Objective specification
Bluetooth radio module
BGB110
VS_DIG OSC SYS_CLK_REQ SYS_CLK POR_EXT POR LPO_CLK
Phase 1 Rdy = 0 Phase 2 Rdy = 1
Fig.5 Reset timing
Transmit mode The BGB110 TrueBlue Bluetooth radio module contains a fully integrated transmitter function. The RF channel frequency is selected in a conventional synthesizer, which is controlled via the serial JTAG interface. After the RF frequency has settled, the power amplifier is switched on and the modulation input is preset to its mean value. The RF frequency is allowed to resettle, to overcome possible frequency pulling effects, and the synthesizer loop is opened. The data stream present on the TX_DATA line is Gaussian filtered and converted to an analog signal which then directly modulates the VCO. The robust design of the VCO makes it unnecessary to trim its freerunning frequency. This leads to a lower component cost. A carefully designed PLL loop filter keeps frequency drift during open-loop modulation down to a very low value. The output stage of the transmit chain active part is balanced, for reduced spurious emissions (EMC). It is connected through a balun (balanced-to-unbalanced) circuit to the TX/RX switch. This switch is controlled by internal logic circuits in the active die. The balun circuit has built-in selectivity, to further reduce out-of-band spurious emissions. Receive mode Also the receiver functionality is fully integrated. It is a near-zero-IF (1 MHz) architecture with active image rejection. The sensitive RX input of the active die is a balanced configuration, in order to reduce unwanted (spurious) responses. The balun structure to convert from unbalanced to balanced signals has built-in selectivity. This suppresses GSM-900 frequencies by more than 40 dB. For better immunity to DCS, DECT, GSM-1800 and W-CDMA signals, an extra band-pass filter has been included. The synthesizer PLL is switched off during demodulation. This reduces the effects that reference frequency breakthrough may have on receiver sensitivity, and also reduces the power consumption. The demodulator contains an advanced AFC circuit. This reduces the effects of frequency mismatch between (remote) transmitter and receiver. These may be caused by differences in reference frequency, but also by frequency drift during open-loop modulation and demodulation. The demodulated RF signal is sampled and compared against a reference (slicer) value and then output on the RX_DATA line. An RSSI output with a high dynamic range of nearly 50 dB provides information on the quality of the signal received. The RSSI value is read out via the JTAG interface, as described above.
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Philips Semiconductors
Objective specification
Bluetooth radio module
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS Vctrl GND Ptot PD Tstg Tamb Tj Notes 1. Pins short-circuited internally must be short-circuited externally. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient VALUE tbd PARAMETER supply voltage control pin voltage difference in ground supply voltage between ground pins total power dissipation drive power at receiver input storage temperature ambient temperature junction temperature note 1 CONDITIONS MIN. -0.3 -0.3 - - - -55 -10 - VS 0.01 tbd 0 +125 +50 150 MAX. 3.6
BGB110
UNIT V V V W dBm C C C
UNIT K/W
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Philips Semiconductors
Objective specification
Bluetooth radio module
BGB110
CHARACTERISTICS VCC = 3.0 V;Tamb = 25 C; fdev = 160 kHz; unless otherwise specified. Characteristics for which only a typical value is given are not tested. SYMBOL Supply VS IS(GUARD-RX) IS(RX) IS(GUARD-TX) IS(TX) IS(pd) fref fref Vref(min) Rin Cin fVCO CNR500kHz CNR2500kHz f1 slot f3, 5 slots tPLL fRF f Po Po 1 MHz PLL settling time carrier drift supply voltage total supply current total supply current total supply current total supply current total supply current during RX guard space during RX (PLL off) during TX guard space during TX (PLL off) power-down mode 2.8 - - - - - 3.0 30 65 43 37 1 3.6 tbd tbd tbd tbd tbd V mA mA mA mA mA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Frequency selection reference input frequency reference frequency inaccuracy sinusoidal input signal level input resistance (real part of the input impedance) input capacitance oscillator frequency carrier to noise ratio RMS value at 13 MHz; XON, XOP pins at 13 MHz; XON, XOP pins over full temperature and supply range; note 1 offset from carrier 500 kHz offset from carrier 2500 kHz over 1 TX slot over 3, 5 TX slots (DM3, DH3, DM5, DH5 packets) across entire band tbd tbd - - 1201 89 120 -25 -40 - 2402 -175 140 -6 - 13 - - tbd tbd - 105 tbd 0 0 150 - -160 160 0 - tbd tbd - - 1240 - - 25 40 200 MHz ppm mV k pF MHz dBcHz dBcHz kHz kHz s MHz kHz kHz dBm dBc
TX performance RF frequency VCO frequency deviation output power adjacent channel output power over full temperature and supply range "0" bit "1" bit wanted channel at 1 MHz offset; measured in 100 kHz bandwidth; referred to wanted channel normalized to Zo = 50 referred to wanted output level; fRF = 2450 MHz; fVCO = 1225 MHz 2480 -140 175 4 -20
VSWR H1, VCO H3, VCO H4, VCO H6, VCO
voltage standing wave ratio VCO frequency feedtrough VCO VCO 3rd 4th harmonic harmonic
- - - - -
tbd tbd tbd tbd tbd
tbd tbd tbd tbd tbd dBc dBc dBc dBc
VCO 6th harmonic
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Philips Semiconductors
Objective specification
Bluetooth radio module
BGB110
SYMBOL
PARAMETER out of band spurious emissions
CONDITIONS 30 MHz to 1 GHz 1 GHz to 12.75 GHz 1.8 GHz to 1.9 GHz 5.15 GHz to 5.3 GHz
MIN. - - - - - -20 - 2402 -86 - -0.5
TYP. tbd tbd tbd tbd -80 tbd tbd - - 8 - tbd
MAX. -36 -30 -47 -47 -73 - tbd 2480 -36 - 0.5 -
UNIT dBm dBm dBm dBm
Receiver performance SENS Pi max VSWR fRF RSSI resRSSI IM3 sensitivity maximum input power in one channel voltage standing wave ratio RF input frequency RSSI range RSSI resolution RSSI linearity error intermodulation rejection wanted signal -64 dBm; Interferers 5 and 10 channels away; BER < 0.1 % wanted signal -60dBm; BER < 0.1 % wanted signal -60dBm; BER < 0.1 % wanted signal -60dBm; BER < 0.1 % wanted signal -67dBm; BER < 0.1 % wanted signal -67dBm; BER < 0.1 % wanted signal -67dBm; BER < 0.1 %; N+3 is a special case, see above wanted signal -67dBm; CW interferer level range 30 MHz to 2 GHz range 2 GHz to 2400 MHz range 2500 MHz to 3 GHz range 3 GHz to 12.75 GHz -10 -27 -27 -10 - - - - tbd - - - - - dBm dBm dBm dBm dBm BER = 0.1 % BER < 0.1 % normalized to Zo = 50 over full temperature and supply range dBm dBm
MHz dBm bits lsb dBc
28
RCO RC/I 1MHz RC/I 2MHz RC/I Image RC/I Image
1MHz
co-channel rejection adjacent channel rejection ( 1 MHz) bi-adjacent channel rejection (N-2) rejection at image frequency (N+2) rejection at image-adjacent frequency (N+3) image adjacent channel rejection
-11 0 30 9 20 40
-10 3 tbd 11 27 tbd
- - - - - -
dBc dBc dBc dBc dBc dBc
RC/I 3MHz
out of band blocking
wanted signal -67dBm; GSM tbd modulated signal between 880 and 915 MHz (GSM-900 uplink) wanted signal -67dBm; GSM modulated signal between 1800 and 1785 MHz (GSM-1800 uplink) tbd
tbd
-
dBm
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Philips Semiconductors
Objective specification
Bluetooth radio module
BGB110
SYMBOL
PARAMETER spourious emissions
CONDITIONS 30 MHz to 1 GHz 1 GHz to 12.75 GHz measured at 2450MHz
MIN. - - - 2.1 -0.5 2.4 -
TYP. tbd tbd tbd - - - - - - 13 3.2
MAX. tbd tbd -47
UNIT dBc dBc dBc
FTLOrf
LO to RF feedthrough
Interface (logic) inputs and outputs VIH VIL VOH VOL Ibias fJTAG fSYS fLPO Notes 1. The VCO frequency is one-half the RF frequency. HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage input bias current JTAG interface frequency system clock frequency low-power clock frequency HIGH or LOW level VS 0.9 - 0.5 10 5 - - V V V V A MHz MHz kHz
-10 1 - -
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Philips Semiconductors
Objective specification
Bluetooth radio module
SOLDERING The indicated temperatures are those at the solder interfaces. Advised solder types are types with a liquidus less than or equal to 210 C. Solder dots or solder prints must be large enough to wet the contact areas. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process is permitted. Hand soldering is not recommended because the soldering iron tip can exceed the maximum permitted temperature of 250 C and damage the module. In case handsoldering is needed, recommendations can be found in RNR-45-98-A-0485. The maximum allowed temperature is 250 C for a maximum of 5 seconds. The maximum ramp-up is 10 C per second. The maximum cool-down is 5 C per second. Cleaning The following fluids may be used for cleaning: * Alcohol * Bio-Act (Terpene Hydrocarbon) * Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. Packing
100
BGB110
handbook, halfpage
300
MGM159
T (C) 200
0 0 1 2 3 4 t (min) 5
Fig.7 Recommended reflow temperature profile.
An extended packing / SMD specification can be found in document RNR-T49D-2183.
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Philips Semiconductors
Objective specification
Bluetooth radio module
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BGB110
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
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Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 70
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/ed/pp17
Date of release: 2000
Oct 03
Document order number:
9397 nnn nnnnn

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